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Unit collector cutoff current icbo v ce700v, ie0 10 ua emitter cutoff current iebo veb6. Information storage devices datasheet pdf catalog first page. High voltage fastswitching npn power transistor farnell. Storage temperature tstg55150 oc description parameter symbol test conditions min. Find ibm storage solution briefs, white papers, data sheets and more. The storage capacity ranges from 128 mb to 16gb and rising. Datasheet fujitsu eternus dx90 s2 disk storage system. A memory area used for the temporary storage of data usually as a step in transferring the data. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. It plugs into almost any usb port in your computer and the data is erasable. Spacesaving sot223 and wson packages the lm1117 is available in an adjustable version. October 2007 rev 1 111 11 stb05 high voltage fastswitching npn power transistor features low spread of dynamic parameters minimum lottolot spread for reliable operation very high switching speed through hole to262 i2pak power package in tube suffix 1 applications electronic ballast for fluorescent lighting switch mode power supplies. Features, high voltage capability, high speed switching.
Operating junction temperature and storage temperature tj, tstg. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Rohs mje05anpn rohs semiconductor nell high power products switchmode series npn silicon power transistors 4a 400v 75w features vceosus. Read on to learn cohassets opinion on hyperstore which includes whether or not it retains records requiring timebased retention in compliance with the recording and nonrewritable, nonerasable storage of electronic records. In this ebook, cohasset associates has been called upon to assess the capabilities of cloudian hyperstore. However, at lower test currents this relationship may not be valid. High voltage fastswitching npn power transistor stmicroelectronics. Absolute maximum ratings symbol parameter value unit vces collectoremitter voltage vbe 0 700 v vceo collectoremitter voltage ib 0 400 v vebo emitterbase voltage ic 0, ib 0. Key features self sealing adhesive coating indexing space clear aperture.
St05 datasheet, cross reference, circuit and application notes in pdf format. Pdf kse0405 kse04 kse05 eb 05 transistor 05 circuit. Are you currently using a flat file storage system for your. Polywell storage high performance iscsisannas cloud model. As is common with most switching transistors, resistive. Proceedings nordic wind power conference part, business dickdick. Refer datasheet for complete details the software installs a printer called pdf redirect on your computer and when you want 742881 use the software you print the document to that printer. Unit test conditions collector to base breakdown voltage vbrcbo 30 v ic1ma, i e0 collector to emitter breakdown voltage vbrceo 30 v ic10ma, i b0. Large document storage presents a unique challenge that goes beyond traditional filing equipment and supplies, and storage is usually the most costly component of any system.
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